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| FDD6670A July 2005 FDD6670A 30V N-Channel PowerTrench(R) MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package. Features * 66 A, 30 V RDS(ON) = 8 m @ VGS = 10 V RDS(ON) = 10 m @ VGS = 4.5 V * Low gate charge * Fast Switching * High performance trench technology for extremely low RDS(ON) Applications * DC/DC converter * Motor Drives D D G S G D-PAK TO-252 (TO-252) S Absolute Maximum Ratings Symbol VDSS VGSS ID TA=25oC unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25C @TA=25C Pulsed (Note 3) (Note 1a) (Note 1a) (Note 3) (Note 1a) (Note 1b) Ratings 30 20 66 15 100 63 3.2 1.3 -55 to +175 Units V V A PD Power Dissipation @TC=25C @TA=25C @TA=25C W TJ, TSTG Operating and Storage Junction Temperature Range C C/W Thermal Characteristics RJC RJA RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) 2.4 40 96 Package Marking and Ordering Information Device Marking FDD6670A Device FDD6670A Package D-PAK (TO-252) Reel Size 13'' Tape width 12mm Quantity 2500 units (c)2005 Fairchild Semiconductor Corp. FDD6670A Rev E1(W) FDD6670A Electrical Characteristics Symbol EAS IAS TA = 25C unless otherwise noted Parameter Drain-Source Avalanche Energy Drain-Source Avalanche Current Test Conditions Single Pulse, VDD = 15 V, ID= 66 A Min Typ Max Units 67 66 mJ A Drain-Source Avalanche Ratings (Note 2) Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) VGS = 0 V, ID = 250 A 30 26 1 100 V mV/C A nA ID = 250 A,Referenced to 25C VDS = 24 V, VGS = 20 V, VGS = 0 V VDS = 0 V On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = 250 A ID = 250 A,Referenced to 25C VGS VGS VGS VGS = 10 V, ID = 15 A = 4.5 V, ID = 13 A = 10 V, ID = 15 A,TJ=125C = 10 V, VDS = 5 V ID = 15 A 1 1.8 -5 6.3 7.9 9.5 3 V mV/C m 8 10 13 ID(on) gFS 50 60 A S VDS = 10 V, Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = 15 V, f = 1.0 MHz VGS = 15 mV, V GS = 0 V, 1755 430 180 1.3 pF pF pF f = 1.0 MHz Switching Characteristics td(on) tr td(off) tf Qg Qg s Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge 11 VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 12 29 19 16 VDS = 15V, VGS = 5 V ID = 15 A, 4.6 6.2 20 21 47 34 22 ns ns ns ns nC nC nC FDD6670A Rev. E1(W) FDD6670A Electrical Characteristics Symbol IS VSD trr Qrr TA = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units 2.3 0.74 28 18 1.2 A V ns nC Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 2.3 A (Note 2) IF = 15 A, dIF/dt = 100 A/s Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) RJA = 45C/W when mounted on a 1in2 pad of 2 oz copper b) RJA = 96C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% PD R DS(ON) 3. Maximum current is calculated as: where PD is maximum power dissipation at TC = 25C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A FDD6670A Rev. E1(W) FDD6670A Typical Characteristics 100 3 VGS=10V 4.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 3.5V 4.0V 4.5V 6.0V 10V VGS = 3.0V 80 ID, DRAIN CURRENT (A) 6.0V 60 4.5V 3.5V 40 20 3.0V 0 0 0.5 1 1.5 2 VD S, DRAIN-SOURCE VOLTAGE (V) 2.5 0.8 0 20 40 60 ID, DRAIN CURRENT (A) 80 100 Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 0.02 RDS(ON), ON-RESISTANCE (OHM) 1.6 R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 66A VGS = 10V 1.4 ID = 33A 0.0175 0.015 o 1.2 0.0125 TA = 125 C 1 0.01 o 0.8 0.0075 TA = 25 C 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (oC) 125 150 0.005 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation withTemperature 90 VDS = 5V Figure 4. On-Resistance Variation with Gate-to-Source Voltage 1000 VGS = 0V I S, REVERSE DRAIN CURRENT (A) 80 ID , DRAIN CURRENT (A) 70 60 50 40 30 20 10 0 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4 25 C o 100 10 1 0.1 0.01 0.001 TA = 125 C o T A =125 C -55 C o o 25 C o -55 C o 0.0001 0 0.2 0.4 0.6 0.8 1 VSD , BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature FDD6670A Rev. E1(W) FDD6670A Typical Characteristics 10 VGS , GATE-SOURCE VOLTAGE (V) ID = 66A 8 2400 f = 1MHz VGS = 0 V 2000 VDS = 10V CAPACITANCE (pF) 6 15V 4 20V 1600 Ciss 1200 800 Coss 2 400 C rss 0 0 5 10 15 20 25 Qg, GATE CHARGE (nC) 30 35 0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics 1000 P(pk), PEAK TRANSIENT POWER (W) Figure 8. Capacitance Characteristics 100 100 ID, DRAIN CURRENT (A) 100s RDS(ON) LIMIT 1ms 10ms 100ms 1s 10s DC VGS = 10V SINGLE PULSE o RJA = 96 C/W TA = 25 C o 80 SINGLE PULSE RJA = 96C/W T A = 25C 10 60 1 40 0.1 20 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.01 0.1 1 10 t1, TIME (sec) 100 1000 Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 R JA(t) = r(t) * RJA RJA = 96 C/W P(pk) 0.0 0.1 0.1 0.05 0.02 t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD6670A Rev. E1(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST(R) ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM i-LoTM EnSignaTM ImpliedDisconnectTM FACTTM IntelliMAXTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 |
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